c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 www. ruichips .com ru 35 6 0l n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 4 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 50 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 200 a t c =25 c 50 i d continuous drain current t c =100 c 40 a t c =25 c 50 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 3 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 1 0 0 m j ? 4 0 v/ 50 a, r ds ( on ) = 13 m ( tpy.)@ v gs =10v r ds ( on ) = 18 m ( tpy.)@ v gs = 4.5 v ? super high dense cell design ? reliable and rugged ? fast switching and fully avalanche rated ? lead free and green devices available ( rohs compliant) ? low voltage inverter applications absolute maximum ratings to252 n - channel mosfe t
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 2 www. ruichips .com ru 35 6 0l electrical characteristics ( t a =25 c unless otherwise noted) ru 35 60l symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 4 0 v v ds = 4 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1.5 2 2.7 v i gss gate leakage current v gs = 2 0 v, v ds =0v 100 n a v gs = 10 v, i ds = 25 a 13 16 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 2 0 a 1 8 22 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature . current limited by bond wire. limited by t jmax , i as = 2 0 a, v dd = 3 0 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 25 a, v gs =0v 1. 2 v t rr reverse recovery time 14 ns q rr reverse recovery charge i sd = 25 a, dl sd /dt=100a/ m s 32 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 2 w c iss input capacitance 9 80 c oss output capacitance 16 0 c rss reverse transfer capacitance v gs =0v, v ds = 20 v, frequency=1.0mhz 8 0 pf t d ( on ) turn - on delay t ime 6 t r turn - on rise time 10 t d ( off ) turn - off delay time 2 4 t f turn - off fall time v dd = 20 v, r l = 15 w , i ds = 25 a, v gen = 10v, r g = 6 w 5 ns gate charge characteristics q g total gate charge 18 23 q gs gate - source ch arge 2. 5 q gd gate - drain charge v ds = 20 v, v gs = 10v, i ds = 25 a 5 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 3 www. ruichips .com ru 35 6 0l typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v d s - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 4 www. ruichips .com ru 35 6 0l typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 5 www. ruichips .com ru 35 6 0l typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temper ature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 6 www. ruichips .com ru 35 6 0l avalanche test circuit a nd waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 7 www. ruichips .com ru 35 6 0l ordering and marking information ru 35 60 package (available) l : to252 operating temperature range c : - 55 to 1 50 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 8 www. ruichips .com ru 35 6 0l package information to252 - 2l all dimensions refer to jedec standard do not include mold flash or protr usions mm inch mm inch symbol min max min max symbol min max min max a 2.2 00 2.400 0.087 0.094 l 9.800 10.400 0.386 0.409 a1 0.000 0.127 0.000 0.005 l1 2.900 ref. 0.114 ref. b 0.660 0.860 0.026 0.034 l2 1.400 1.700 0.055 0.067 c 0.460 0.580 0.018 0.023 l3 1.600 ref. 0.063ref. d 6.500 6.700 0.256 0.264 l4 0.600 1.000 0.024 0. 039 d1 5.100 5.460 0.201 0.215 1.100 1.300 0.043 0.051 d2 4.830 ref. 0.190 ref. 0 8 0 8 e 6.000 6.200 0.236 0.244 h 0.000 0.300 0.000 0.012 e 2.186 2.386 0.086 0.094 v 5.350 ref. 0.211 ref.
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 201 1 9 www. ruichips .com ru 35 6 0l customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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